CHARACTERIZATION OF DISORDERED BONDS IN SI-IMPLANTED GA_0.47IN_0.53AS WITH LASER RAMAN SPECTROSCOPYKAKIMOTO K; KATODA T.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 9; PP. 811-813; BIBL. 11 REF.Article

CHARACTERIZATION OF THE FV FRAGMENT ISOLATED FROM HUMAN IMMUNOGLOBULIN MKAKIMOTO K; ONOUE K.1974; J. IMMUNOL.; U.S.A.; DA. 1974; VOL. 112; NO 4; PP. 1373-1382; BIBL. 33 REF.Article

RAMAN SPECTRA FROM GA_1-XIN_XAS EPITAXIAL LAYERS GROWN ON GAAS AND INP SUBSTRATESKAKIMOTO K; KATODA T.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 826-828; BIBL. 12 REF.Article

TEMPERATURE AND ENERGY DEPENDENCES OF CAPTURE CROSS SECTIONS AT SURFACE STATES IN SI METAL-OXIDE-SEMICONDUCTOR DIODES MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPYKATSUBE T; KAKIMOTO K; IKOMA T et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3504-3508; BIBL. 20 REF.Article

Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystalsGAO, B; KAKIMOTO, K.Journal of crystal growth. 2014, Vol 392, pp 92-97, issn 0022-0248, 6 p.Article

Dislocation effect on crystal-melt interface : an in situ observation of the melting of siliconYUREN WANG; KAKIMOTO, K.Journal of crystal growth. 2000, Vol 208, Num 1-4, pp 303-312, issn 0022-0248Article

Flow instability during crystal growth from the meltKAKIMOTO, K.Progress in crystal growth and characterization of materials. 1995, Vol 30, Num 2-3, pp 191-215, issn 0960-8974Article

Clustering parameter and internal stress in III-V ternary alloysKAKIMOTO, K; KATODA, T.Japanese journal of applied physics. 1985, Vol 24, Num 8, pp 1022-1029, issn 0021-4922Article

Segregation of oxygen at a solid/liquid interface in siliconKAKIMOTO, K; OZOE, H.Journal of the Electrochemical Society. 1998, Vol 145, Num 5, pp 1692-1695, issn 0013-4651Article

ENHANCED TUMOR GROWTH CAUSED BY ANTI-TH-B ANTISERUM DUE TO A POSSIBLE ACTIVATION OF SUPPRESSOR T-CELLS.KAKIMOTO K; FUJI H; GROSSBERG AL et al.1977; CANCER RES.; U.S.A.; DA. 1977; VOL. 37; NO 9; PP. 3145-3150; BIBL. 22 REF.Article

A SENSITIVE FLUORIMETRIC DETECTION OF CARBOHYDRATES WITH ETHYLENEDIAMINE SULFATEHONDA S; KAKIMOTO K; KAKEHI K et al.1973; ANAL. CHIM. ACTA; PAYS-BAS; DA. 1973; VOL. 64; NO 2; PP. 310-312; BIBL. 4 REF.Serial Issue

Dislocation-density-based modeling of the plastic behavior of 4H―SiC single crystals using the Alexander-Haasen modelGAO, B; KAKIMOTO, K.Journal of crystal growth. 2014, Vol 386, pp 215-219, issn 0022-0248, 5 p.Article

Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperatureGAO, B; KAKIMOTO, K.Journal of crystal growth. 2014, Vol 396, pp 7-13, issn 0022-0248, 7 p.Article

Temperature dependence of viscosity of molten GaAs by an oscillating cup methodKAKIMOTO, K; HIBIYA, T.Applied physics letters. 1987, Vol 50, Num 18, pp 1249-1250, issn 0003-6951Article

Characterization of disorder and annealing behavior of Si-implanted Ga_1-xAl_xAs with laser Raman spectroscopyKAKIMOTO, K; KATODA, T.Journal of applied physics. 1986, Vol 59, Num 5, pp 1477-1481, issn 0021-8979Article

Composition dependence of viscosity for molten Ga_1-xAs_x (0.0≤x≤0.53) = Variation en fonction de la composition de la viscosité pour Ga_1-xAs_x fondu (0,0≤x≤0,53)KAKIMOTO, K; HIBIYA, T.Applied physics letters. 1988, Vol 52, Num 19, pp 1576-1577, issn 0003-6951Article

FURTHER CHARACTERIZATION OF THE SUPPRESSOR CELLS, ACTIVATED BY GOAT ANTI-TH-B ANTIBODY REAGENT AND RESPONSIBLE FOR ENHANCED GROWTH OF SARCOMA 180 IN AKR MICE.KAKIMOTO K; FUJI H; GROSSBERG AL et al.1978; CELL. IMMUNOL.; U.S.A.; DA. 1978; VOL. 37; NO 1; PP. 61-76; BIBL. 25 REF.Article

Numerical investigation of the influence of cooling flux on the generation of dislocations in cylindrical mono-like silicon growthGAO, B; KAKIMOTO, K.Journal of crystal growth. 2013, Vol 384, pp 13-20, issn 0022-0248, 8 p.Article

Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growthGAO, B; KAKIMOTO, K.Journal of crystal growth. 2010, Vol 312, Num 20, pp 2972-2976, issn 0022-0248, 5 p.Article

HRTEM and ELNES analysis of polycarbosilane-derived Si-C-O bulk ceramicsKANEKO, K; KAKIMOTO, K.-I.Journal of non-crystalline solids. 2000, Vol 270, Num 1-3, pp 181-190, issn 0022-3093Article

Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fieldsKAKIMOTO, K; OZOE, H.Journal of crystal growth. 2000, Vol 212, Num 3-4, pp 429-437, issn 0022-0248Article

Kinetic study by viscosity measurements on direct synthesis of gallium antimonideKAKIMOTO, K; HIBIYA, T.Journal of applied physics. 1989, Vol 66, Num 9, pp 4181-4183, issn 0021-8979, 3 p.Article

Numerical analysis of the velocity of SiC growth by the top seeding methodINUI, F; GAO, B; NAKANO, S et al.Journal of crystal growth. 2012, Vol 348, Num 1, pp 71-74, issn 0022-0248, 4 p.Article

The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AlN crystalsGAO, B; NAKANO, S; KAKIMOTO, K et al.Journal of crystal growth. 2012, Vol 338, Num 1, pp 69-74, issn 0022-0248, 6 p.Article

Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnaceGAO, B; NAKANO, S; KAKIMOTO, K et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 239-245, issn 0022-0248, 7 p.Article